Metamorphic in0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate with fT over 200GHz

Electronics Letters

Volumn 35, Issue 21, 1999, Pages 1854-1856

  Dumka, D C ^a,b   Hoke, W E ^a   Lemonias, P J ^a   Cueva, G ^a   Adesida, I ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENTS; INDIUM ALUMINUM ARSENIDE;

CARRIER CONCENTRATION; CARRIER MOBILITY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSCONDUCTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033204036     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19991267     Document Type: Article

References (7)

1. CHERTOUK, M., HEISS, H., XU, D., KRAUS, S., KLEIN, W., BOEHM, G., TRAENKLE, G., and WEIMANN, G.: 'Metamorphic InAlAs/InGaAs HEMTs on GaAs substrate with novel composite channels design', IEEE Electron Device Lett., 1996, 17, pp. 273-275
2. 0.6As HEMTs on GaAs substrate', IEEE Electron Device Lett., 1999, 20, pp. 123-125
3. 0.2As HFETs on GaAs substrate', Electron. Lett., 1995, 31, pp. 1292-1294
4. HOKE, W.E., LEMONIAS, P.J., MOSCA, J.J., LYMAN, P.S., TORABI, A., MARSH, P.F., MCTAGGART, R.A., LARDIZABAL, S.M., and HETZLER, K.: 'Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates', J. Vac. Sci. Technol. B. 1999, 17, pp. 1131-1135
5. BEHET, M., VAN DER ZANDEN, K., BORGHS, G., and BEHRES , A.: 'Metamorphic InGaAs/InAlAs quantum well structures grown on GaAs substrate for high electron mobility transistor applications', Appl. Phys. Lett., 1998, 73, pp. 2760-2762
6. 0.65As heterojunction FET on GaAs substrate with 1W output power', IEEE Electron Device Lett., 1999, 20, pp. 369-371
7. T of 200GHz'. IEE Colloquium Advances in Semiconductor Devices, 1999, pp. 7/1-7/5