Low noise In0.32(AlGa)0.68As/In0.43Ga0.57As metamorphic HEMT on GaAs substrate with 850 mW/mm output power density

IEEE Electron Device Letters

Volumn 21, Issue 1, 2000, Pages 5-8

  Whelan, C S ^a   Hoke, W E ^a   McTaggart, R A ^a   Lardizabal, S M ^a   Lyman, P S ^a   Marsh, P F ^a   Kazior, T E ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; GATES (TRANSISTOR); SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SPURIOUS SIGNAL NOISE; SUBSTRATES;

METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS (MHEMT);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033874969     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.817435     Document Type: Article

References (12)

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