Low-dimensional SiC nanostructures: Fabrication, luminescence, and electrical properties

Progress in Materials Science

Volumn 51, Issue 8, 2006, Pages 983-1031

  Fan, J Y ^a,b   Wu, X L ^a,b   Chu, Paul K ^b  

^a NANJING UNIVERSITY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT STATES; NANOSTRUCTURED SILICON CARBIDE; QUANTUM CONFINEMENT;

BIOMEDICAL ENGINEERING; ELECTRON EMISSION; ETCHING; LUMINESCENCE; MICROELECTRONICS; NANOSTRUCTURED MATERIALS; OPTOELECTRONIC DEVICES; SILICON CARBIDE;

ELASTICITY;

EID: 33749589734     PISSN: 00796425     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.pmatsci.2006.02.001     Document Type: Review

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