Nanochemistry at the atomic scale revealed in hydrogen-induced semiconductor surface metallization

Nature Materials

Volumn 2, Issue 4, 2003, Pages 253-258

  Derycke, Vincent ^a   Soukiassian, Patrick G ^a   Amy, Fabrice ^b,c   Chabal, Yves J ^b,d   D'Angelo, Marie D ^a   Enriquez, Hanna B ^a   Silly, Mathieu G ^a  

^a DIF   (France)

^b AGERE SYSTEMS   (United States)

^c Princeton University   (United States)

^d RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ATOMS; ELECTRONIC DENSITY OF STATES; ENERGY GAP; HYDROGEN; HYDROGEN BONDS; INTERFACES (MATERIALS); PHOTOELECTRON SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE; SURFACE CHEMISTRY;

DANGLING BOND; NANOCHEMISTRY; SEMICONDUCTOR SURFACE METALLIZATION;

NANOTECHNOLOGY;

HYDROGEN; INORGANIC COMPOUND; METAL; SILICON CARBIDE; SILICON DERIVATIVE;

ADSORPTION; ARTICLE; CHEMICAL STRUCTURE; CHEMISTRY; CRYSTALLOGRAPHY; HYDROGEN BOND; INSTRUMENTATION; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR; SPECTROSCOPY; SURFACE PROPERTY;

ADSORPTION; CARBON COMPOUNDS, INORGANIC; CRYSTALLOGRAPHY; HYDROGEN; HYDROGEN BONDING; MATERIALS TESTING; METALS; MICROCHEMISTRY; MICROSCOPY, SCANNING TUNNELING; MODELS, MOLECULAR; NANOTECHNOLOGY; SEMICONDUCTORS; SILICON COMPOUNDS; SPECTRUM ANALYSIS; SURFACE PROPERTIES;

EID: 0038579434     PISSN: 14761122     EISSN: None     Source Type: Journal    
DOI: 10.1038/nmat835     Document Type: Article

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