Ion-beam synthesis of epitaxial silicon carbide in nitrogen-implanted diamond

Applied Physics Letters

Volumn 77, Issue 2, 2000, Pages 226-228

  Heera, V ^a   Fontaine, F ^a   Skorupa, W ^a   Pecz B ^b   Barna, A ^b  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038494784     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126932     Document Type: Article

References (13)

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11. A. Barna, B. Pécz, and M. Menyhard, Ultramicroscopy 70, 161 (1998).
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13. R. Kalish, Diamond Relat. Mater. 2, 621 (1993).