Time-resolved photoluminescence spectra of strong visible light-emitting SiC nanocrystalline films on Si deposited by electron-cyclotron-resonance chemical-vapor deposition

Applied Physics Letters

Volumn 76, Issue 18, 2000, Pages 2550-2552

  Xu, S J ^a   Yu, M B ^b   Rusli, ^b   Yoon, S F ^b   Che, C M ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001705167     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126382     Document Type: Article

References (30)

1. C. L. Harris, Properties of Silicon Carbide (INSPEC, London, U.K., 1995).
2. G. Pensl, H. Morkoç, B. Monemar, and E. Janzén, Silicon Carbide, III-Nitrides and Related Materials: Parts I and II (Trans. Tech., Switzerland, 1998).
3. SiC Materials and Devices. Semiconductors and Semimetals Vol. 52, edited by Y. S. Park (Academic, London, U.K., 1998).
4. L. Hoffman, G. Ziegler, D. Theis, and C. Weyrich, J. Appl. Phys. 53, 6962 (1982).
5. D. Engemann, R. Fischer, and J. Knecht, Appl. Phys. Lett. 32, 567 (1978).
6. H. Munekata and H. Kukimoto, Appl. Phys. Lett. 42, 432 (1983).
7. D. Kruangam, T. Endo, W. Guang-Pu, H. Okamoto, and Y. Hamakawa, Jpn. J. Appl. Phys., Part 2 24, L806 (1985).
8. D. Kruangam, in Amorphous and Microcrystalline Semiconductor Devices: Optoelectronic Devices, edited by J. Kanicki (Artech House, 1991), Chap. 6.
9. S. Y. Lee, K. C. Song, J. Kim, J.-H. Son, and J. Ahn, Jpn. J. Appl. Phys., Part I 37, 6841 (1998).
10. A. R. Shimkunas, P. E. Mauger, L. P. Bourget, R. S. Post, L. Smith, R. F. Davis, G. M. Wells, F. Carrina, and R. B. McIntosh, J. Vac. Sci. Technol. B 9, 3258 (1991).
11. T. Matsumoto, J. Takahashi, T. Tamaki, F. Futagi, H. Mimura, and Y. Kanemitsu, Appl. Phys. Lett. 64, 226 (1994).
12. H. Mimura, T. Matsumoto, and Y. Kanemitsu, Appl. Phys. Lett. 65, 3350 (1994).
13. A. O. Konstantinov, A. Henry, C. I. Harris, and E. Janzén. Appl. Phys. Lett. 66, 2250 (1995).
14. L. S. Liao, X. M. Bao, Z. F. Yang, and N. B. Min, Appl. Phys. Lett. 66, 2382 (1995).
15. M. B. Yu, Rusli and S. F. Yoon (unpublished).
16. S. Yoshida, in Properties of Silicon Carbide, edited by G. L. Harries (INSPEC, London, U.K., 1995), p. 76.
17. K. Järrendahl and R. F. Davis, in SiC Materials and Devices, Semiconductors and Semimetals. Vol. 52, edited by Y. S. Park (Academic, London, U.K., 1998), p. 14.
18. R. J. Elliot, Phys. Rev. 106, 1384 (1957).
19. M. Ben-Chorin, B. Averboukh, D. Kovalev, G. Polisski, and F. Koch, Phys. Rev. Lett. 77, 763 (1996).
20. D. J. Lockwood, Solid State Commun. 92, 101 (1994).
21. J. P. Bergman, E. Janzén, S. G. Sridhara, and W. Choyke, Silicon Crabide, III-Nitrides and Related Materials: Part I (Trans. Tech., Switzerland, 1998), p. 485.
22. G. W. 't Hooft, W. A. J. A. van der Poel, and L. W. Molenkamp, Phys. Rev. B 35, 8281 (1987).
23. O. Brandt, J. Ringling, K. H. Ploog, H.-J. Wünsche, and F. Henneberger, Phys. Rev. B 58, R15977 (1998).
24. J. Feldmann, G. Peter, E. O. Göbel, P. Dawson, K. Moore, C. Foxon, and R. J. Elliott, Phys. Rev. Lett. 59, 2337 (1987).
25. P. Lefebvre, J. Allègre. B. Gil, A. Kavokine, H. Mathieu, W. Kim, A. Salvador, A. Botchkarev, and H. Morkoç, Phys. Rev. B 57, R9447 (1998).
26. M. Colocci, A. Vinattieri, L. Lippi, F. Bogani, M. Rosa-Clot, S. Taddei, A. Bosacchi, S. Franchi, and P. Frigeri, Appl. Phys. Lett. 74, 564 (1999).
27. J. P. Wilcoxon and G. A. Samara, Appl. Phys. Lett. 74, 3164 (1999).
28. See, for example, A. P. Alivisatos, Science 271, 933 (1996).
29. F. Koch, V. Petrova-Koch, and T. Muschit, J. Lumin. 57, 271 (1993).
30. G. Allan, C. Delerue, and M. Lannoo, Phys. Rev. Lett. 76, 2961 (1996).