Epitaxial growth of β-SiC by rf sputtering on silicon substrates and its porosity by electrochemical anodization

Optical Materials

Volumn 23, Issue 1-2, 2003, Pages 157-161

  Xie, Erqing ^a   Zhang, Zhimin ^a   Ma, Ziwei ^a   Lin, Hongfeng ^a   He, Deyan ^a  

^a LANZHOU UNIVERSITY   (China)

Author keywords

AFM; IR; PL; Porous SiC film; SEM; XRD; SiC film

Indexed keywords

ABSORPTION SPECTROSCOPY; ANODIC OXIDATION; ATOMIC FORCE MICROSCOPY; CHEMICAL BONDS; CRYSTAL STRUCTURE; ELECTROCHEMISTRY; ELECTROLYTES; EPITAXIAL GROWTH; ETCHING; INFRARED RADIATION; MORPHOLOGY; PHOTOLUMINESCENCE; POROSITY; SCANNING ELECTRON MICROSCOPY; SILICON; X RAY DIFFRACTION ANALYSIS;

ELECTROCHEMICAL ANODIZATION;

SILICON CARBIDE;

EID: 0038348688     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-3467(03)00078-8     Document Type: Conference Paper

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