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Volumn 21, Issue 4, 2003, Pages 1375-1379
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Silicon carbide formation by methane plasma immersion ion implantation into silicon
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
DISSOCIATION;
ION IMPLANTATION;
METHANE;
PHOTOLUMINESCENCE;
PLASMAS;
RAMAN SPECTROSCOPY;
SILICON CARBIDE;
CARBON CLUSTERS;
SEMICONDUCTING FILMS;
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EID: 0141569862
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.1591741 Document Type: Conference Paper |
Times cited : (15)
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References (14)
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