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Volumn 21, Issue 4, 2003, Pages 1375-1379

Silicon carbide formation by methane plasma immersion ion implantation into silicon

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DISSOCIATION; ION IMPLANTATION; METHANE; PHOTOLUMINESCENCE; PLASMAS; RAMAN SPECTROSCOPY; SILICON CARBIDE;

EID: 0141569862     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1591741     Document Type: Conference Paper
Times cited : (15)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.