Fabrication and morphology of porous p-type SiC

Journal of Applied Physics

Volumn 97, Issue 4, 2005, Pages

  Shishkin, Y ^a,b   Ke, Y ^a   Devaty, R P ^a   Choyke, W J ^a  

^a UNIVERSITY OF PITTSBURGH   (United States)

^b UNIVERSITY OF SOUTH FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROCHEMICAL ETCHING; ELECTROLYTIC DISSOLUTION; MASS DENSITY; NONPOROUS INTERFACE;

CURRENT DENSITY; ELECTROCHEMISTRY; ELECTROLYTES; ETCHING; GRAVIMETRIC ANALYSIS; MORPHOLOGY; POROUS MATERIALS; SCANNING ELECTRON MICROSCOPY; SURFACE STRUCTURE;

SILICON CARBIDE;

EID: 13844271255     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1849432     Document Type: Article

References (12)

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