Silicon carbide formation by annealing C60 films on silicon

Journal of Applied Physics

Volumn 81, Issue 9, 1997, Pages 6141-6146

  Moro, L ^a   Paul, A ^a,d   Lorents, D C ^a   Malhotra, R ^a   Ruoff, R S ^a   Lazzeri, P ^b   Vanzetti, L ^b   Lui, A ^b   Subramoney, S ^c  

^a SRI INTERNATIONAL   (United States)

^b ITC IRST   (Italy)

^c DUPONT COMPANY   (United States)

^d INDIAN INSTITUTE OF TECHNOLOGY GUWAHATI   (India)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001763380     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364395     Document Type: Article

References (17)

1. H. Morkoç, S. Strte, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys. 76, 1363 (1994) and references therein.
2. Lijun Tong, M. Mehregany, and L. G. Malus, Appl. Phys. Lett, 60, 2992 (1992).
3. J. S. Shor, D. Goldstein, and A. D. Kurtz, IEEE Trans. Electron Devices 40, 1093 (1993).
4. C. A. Zorman, A. J. Fleischman, A. S. Dewa, M. Meheregany, C. Jacob, S. Nishino, and P. Pirouz, J. Appl. Phys. 78, 5135 (1995).
5. Matsunami, Diam. Relat. Mater. 2, 1043 (1993).
6. J. P. Li and A. J. Steckl, J. Electrochem. Soc 142, 634 (1995).
7. C. J. Mogab and H. J. Leamy, J. Appl. Phys. 45, 1075 (1974).
8. J. Graul and E. Wagner, Appl. Phys. Lett. 21, 67 (1992).
9. S. Nishino, J. A. Powell, and H. A. Will, Appl. Phys. Lett. 42, 460 (1983).
10. A. V. Hamza, M. Balooch, and M. Moalem, Surf Sci. 317, L1129 (1994).
11. D. Chen, R. Workman, and D. Sarid, Surf. Sci. 344, 23 (1995).
12. S. Henke, B. Stritzker, and B. Rauschenbach, J. Appl. Phys. 78, 2070 (1995).
13. C. H. Becker and K. T. Gillen, Anal. Chem. 56, 1671 (1984); J. B. Pallix, U. Schule, C. H. Becker, and D. L. Huestis, ibid. 61, 805 (1989).
14. C. H. Becker and K. T. Gillen, Anal. Chem. 56, 1671 (1984); J. B. Pallix, U. Schule, C. H. Becker, and D. L. Huestis, ibid. 61, 805 (1989).
15. R. Jede, H. Peters, G. Dunnebier, G. Gunschow, U. Kaiser, and K. Seifert, J. Vac Sci. Technol. A 6, 2271 (1988).
16. L. More A. Paul, D. C. Lorents, R. Malhotra, R. S. Ruoff, L. Jiang, G. W. Stupian, and K. J. Wu, Appl Surf. Sci. (accepted for publication).
17. When smaller structures are patterned on a silicon surface, surface diffusion of Si becomes the predominant mechanism (see Ref. 15).