Heterostructures of single-walled carbon nanotubes and carbide nanorods

Science

Volumn 285, Issue 5434, 1999, Pages 1719-1722

  Zhang, Y ^a   Ichihashi, T ^a   Landree, E ^b   Nihey, F ^a   Iijima, S ^a,c  

^a NEC CORPORATION   (Japan)

^b Northwestern University   (United States)

^c MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CRYSTALLINE MATERIALS; ELECTRON DIFFRACTION; INTERFACES (MATERIALS); NANOTUBES; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

NANORODS; SINGLE WALLED CARBON NANOTUBES (SWCNT);

HETEROJUNCTIONS;

CARBON;

ARTICLE; ELECTROCHEMICAL ANALYSIS; ELECTRON DIFFRACTION; ELECTRON MICROSCOPY; PRIORITY JOURNAL; REACTION ANALYSIS;

EID: 0033543598     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.285.5434.1719     Document Type: Article

References (31)

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12. Ideally, the ends of open nanotubes are more reactive than the walls, and thus a vapor-solid reaction could occur preferentially at nanotube ends to form a nanotube/carbide heterojunction at a precisely controlled temperature. However, nanotubes actually produced contain defects and contamination by amorphous carbon along the length of their walls, which can act as preferential sites for carbonizing to occur.
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14. 60 carbonization methods that showed that the growth of SiC after nucleation happened at the C/SiC interface rather than the SiC/Si interface [J. Graul and E. Wagner, Appl. Phys. Lett. 21, 67 (1972); C. J. Mogab and H. J. Leamy, J. Appl. Phys. 45, 1075 (1974); J. P. Li and A. J. Steckl, J. Electrochem. Soc. 142, 634 (1995); A. V. Hamza, M. Balooch, M. Moalem, Surf. Sci. 317, L1129 (1994); D. Chen, R. Workman, D. Sarid, ibid. 344, 23 (1995); L. Moro et al., J. Appl. Phys. 81, 6141 (1997); L. Moro et al., Appl. Surf. Sci. 119, 76 (1997)].
15. 60 carbonization methods that showed that the growth of SiC after nucleation happened at the C/SiC interface rather than the SiC/Si interface [J. Graul and E. Wagner, Appl. Phys. Lett. 21, 67 (1972); C. J. Mogab and H. J. Leamy, J. Appl. Phys. 45, 1075 (1974); J. P. Li and A. J. Steckl, J. Electrochem. Soc. 142, 634 (1995); A. V. Hamza, M. Balooch, M. Moalem, Surf. Sci. 317, L1129 (1994); D. Chen, R. Workman, D. Sarid, ibid. 344, 23 (1995); L. Moro et al., J. Appl. Phys. 81, 6141 (1997); L. Moro et al., Appl. Surf. Sci. 119, 76 (1997)].
16. 60 carbonization methods that showed that the growth of SiC after nucleation happened at the C/SiC interface rather than the SiC/Si interface [J. Graul and E. Wagner, Appl. Phys. Lett. 21, 67 (1972); C. J. Mogab and H. J. Leamy, J. Appl. Phys. 45, 1075 (1974); J. P. Li and A. J. Steckl, J. Electrochem. Soc. 142, 634 (1995); A. V. Hamza, M. Balooch, M. Moalem, Surf. Sci. 317, L1129 (1994); D. Chen, R. Workman, D. Sarid, ibid. 344, 23 (1995); L. Moro et al., J. Appl. Phys. 81, 6141 (1997); L. Moro et al., Appl. Surf. Sci. 119, 76 (1997)].
17. 60 carbonization methods that showed that the growth of SiC after nucleation happened at the C/SiC interface rather than the SiC/Si interface [J. Graul and E. Wagner, Appl. Phys. Lett. 21, 67 (1972); C. J. Mogab and H. J. Leamy, J. Appl. Phys. 45, 1075 (1974); J. P. Li and A. J. Steckl, J. Electrochem. Soc. 142, 634 (1995); A. V. Hamza, M. Balooch, M. Moalem, Surf. Sci. 317, L1129 (1994); D. Chen, R. Workman, D. Sarid, ibid. 344, 23 (1995); L. Moro et al., J. Appl. Phys. 81, 6141 (1997); L. Moro et al., Appl. Surf. Sci. 119, 76 (1997)].
18. 60 carbonization methods that showed that the growth of SiC after nucleation happened at the C/SiC interface rather than the SiC/Si interface [J. Graul and E. Wagner, Appl. Phys. Lett. 21, 67 (1972); C. J. Mogab and H. J. Leamy, J. Appl. Phys. 45, 1075 (1974); J. P. Li and A. J. Steckl, J. Electrochem. Soc. 142, 634 (1995); A. V. Hamza, M. Balooch, M. Moalem, Surf. Sci. 317, L1129 (1994); D. Chen, R. Workman, D. Sarid, ibid. 344, 23 (1995); L. Moro et al., J. Appl. Phys. 81, 6141 (1997); L. Moro et al., Appl. Surf. Sci. 119, 76 (1997)].
19. 60 carbonization methods that showed that the growth of SiC after nucleation happened at the C/SiC interface rather than the SiC/Si interface [J. Graul and E. Wagner, Appl. Phys. Lett. 21, 67 (1972); C. J. Mogab and H. J. Leamy, J. Appl. Phys. 45, 1075 (1974); J. P. Li and A. J. Steckl, J. Electrochem. Soc. 142, 634 (1995); A. V. Hamza, M. Balooch, M. Moalem, Surf. Sci. 317, L1129 (1994); D. Chen, R. Workman, D. Sarid, ibid. 344, 23 (1995); L. Moro et al., J. Appl. Phys. 81, 6141 (1997); L. Moro et al., Appl. Surf. Sci. 119, 76 (1997)].
20. 60 carbonization methods that showed that the growth of SiC after nucleation happened at the C/SiC interface rather than the SiC/Si interface [J. Graul and E. Wagner, Appl. Phys. Lett. 21, 67 (1972); C. J. Mogab and H. J. Leamy, J. Appl. Phys. 45, 1075 (1974); J. P. Li and A. J. Steckl, J. Electrochem. Soc. 142, 634 (1995); A. V. Hamza, M. Balooch, M. Moalem, Surf. Sci. 317, L1129 (1994); D. Chen, R. Workman, D. Sarid, ibid. 344, 23 (1995); L. Moro et al., J. Appl. Phys. 81, 6141 (1997); L. Moro et al., Appl. Surf. Sci. 119, 76 (1997)].
21. 3 = 1:4. The thickness near the wedge-shaped perforation edge was less than several tens of nanometers. The oxide film on the Si surface was also removed by the chemical etching. To prepare Ti and Nb specimens, thin foils (thickness ∼2 μm) were thinned to perforation by ion milling.
22. The SWCNTs were produced by laser ablation of a graphite target containing 1.2 atomic % of a nickel and cobalt mixture. For a detailed description of the laser ablation method, see (11) and T. Guo, P. Nikolaev, A. Thess, D. T. Colbert, R. E. Smalley, Chem. Phys. Lett. 243, 49 (1995).
23. Y. Zhang and S. Iijima, Philos. Mag. Lett. 78, 139 (1998).
24. Strictly speaking, the Si surface as prepared will be terminated by hydrogen or covered with a few monolayers of other surface contaminants, including amorphous carbon, left over from the ethanol used to suspend the SWCNTs. However, these would not influence the result of the experiment, because the surface-terminated hydrogen desorbs at ∼500°C [J. Schmidt, M. R. C. Hunt, P. Miao, R. E. Palmer, Phys. Rev. B 56, 9918 (1997)], and the amorphous carbon contamination on the surface of Si forms epitaxial SiC at ∼800°C [J. P. Becker, R. G. Long, J. E. Mahan, J. Vac. Sci. Technol. A12, 174 (1994); R. C. Henderson, R. B. Marcus, W. J. Polito, J. Appt. Phys. 42, 1208 (1971)].
25. Strictly speaking, the Si surface as prepared will be terminated by hydrogen or covered with a few monolayers of other surface contaminants, including amorphous carbon, left over from the ethanol used to suspend the SWCNTs. However, these would not influence the result of the experiment, because the surface-terminated hydrogen desorbs at ∼500°C [J. Schmidt, M. R. C. Hunt, P. Miao, R. E. Palmer, Phys. Rev. B 56, 9918 (1997)], and the amorphous carbon contamination on the surface of Si forms epitaxial SiC at ∼800°C [J. P. Becker, R. G. Long, J. E. Mahan, J. Vac. Sci. Technol. A12, 174 (1994); R. C. Henderson, R. B. Marcus, W. J. Polito, J. Appt. Phys. 42, 1208 (1971)].
26. Strictly speaking, the Si surface as prepared will be terminated by hydrogen or covered with a few monolayers of other surface contaminants, including amorphous carbon, left over from the ethanol used to suspend the SWCNTs. However, these would not influence the result of the experiment, because the surface-terminated hydrogen desorbs at ∼500°C [J. Schmidt, M. R. C. Hunt, P. Miao, R. E. Palmer, Phys. Rev. B 56, 9918 (1997)], and the amorphous carbon contamination on the surface of Si forms epitaxial SiC at ∼800°C [J. P. Becker, R. G. Long, J. E. Mahan, J. Vac. Sci. Technol. A12, 174 (1994); R. C. Henderson, R. B. Marcus, W. J. Polito, J. Appt. Phys. 42, 1208 (1971)].
27. -9 torr, was used for the heating experiments and for high-resolution microscopy.
28. The bright spots in the SiC {220} ringlike diffraction pattern indicate a partially epitaxial growth of SiC in a relatively thick Si region. The existence of unreacted Si is also indicated in the same diffraction pattern. The splitting of Si {220} diffraction spots is due to the deformation of the Si substrate during heating.
29. An achiral (10, 10) SWCNT has a diameter close to that indicated by the experimental data. For an explanation of the chiral vector of a nanotube, see (4).
30. Bulk self-diffusion parameters for TiC and NbC can be found in G. V. Samsonov and I. M. Vinitskii, Handbook of Refractory Compounds (IFI/Plenum, New York, 1980), pp. 222-223.
31. Partially supported by the Special Coordination Funds of the Science and Technology Agency of the Japanese Government. E.L. acknowledges the support of L. D. Marks.