HREM study of 3C-SiC nanoparticles: Influence of growth conditions on crystalline quality

Journal of Crystal Growth

Volumn 193, Issue 3, 1998, Pages 335-341

  Buschmann, V ^a   Klein, S ^a   Fuess H ^a   Hahn, H ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

3C SiC nanoparticles; Growth conditions; High resolution electron microscopy (HREM); Slip planes; Stacking effects

Indexed keywords

CARBON; CRYSTALLINE MATERIALS; HIGH RESOLUTION ELECTRON MICROSCOPY; NANOSTRUCTURED MATERIALS; PRESSURE EFFECTS; SILICON CARBIDE; STACKING FAULTS;

CHEMICAL VAPOR SYNTHESIS; HOT WALL REACTORS; TETRAMETHYLSILANE;

CRYSTAL GROWTH;

EID: 0032183747     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00537-5     Document Type: Article

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