Laser ablation synthesis and optical characterization of silicon carbide nanowires

Journal of the American Ceramic Society

Volumn 83, Issue 12, 2000, Pages 3228-3230

  Shi, Wensheng ^a   Zheng, Yufeng ^a   Peng, Hongying ^a   Wang, Ning ^a,b   Lee, Chun Sing ^a   Lee, Shuit Tong ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL MICROSTRUCTURE; LASER ABLATION; MORPHOLOGY; PHONONS; RAMAN SCATTERING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LASER ABLATION SYNTHESIS; RAMAN PEAKS; SILICON CARBIDE NANOWIRES;

NANOSTRUCTURED MATERIALS;

EID: 0034506816     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.2000.tb01714.x     Document Type: Article

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