Stable blue-green and ultraviolet photoluminescence from silicon carbide on porous silicon

Solid State Communications

Volumn 106, Issue 4, 1998, Pages 211-214

  Liu, Ruchuan ^a   Yang, Biefang ^a   Fu, Zhengping ^a   He, Pingsheng ^a   Ruan, Yaozhong ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

A. Semiconductor; A. Thin films; D. Optical properties; E. Luminescence

Indexed keywords

ANNEALING; HIGH TEMPERATURE EFFECTS; INFRARED SPECTROSCOPY; LANGMUIR BLODGETT FILMS; PLASTIC FILMS; POLYIMIDES; POROUS SILICON; PYROLYSIS; SILICON CARBIDE; X RAY DIFFRACTION ANALYSIS;

BLUE GREEN PHOTOLUMINESCENCE; HIGH TEMPERATURE PYROLYSIS; POLYIMIDE FILM; ULTRAVIOLET PHOTOLUMINESCENCE;

PHOTOLUMINESCENCE;

EID: 0032042524     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00005-2     Document Type: Article

References (21)

1. Canham, L.T., Appl. Phys. Lett., 57, 1990, 1046.
2. Tsybeskov, L., Suttagupta, S.P. and Faucret, P.M., Solid State Commun., 95, 1993, 429.
3. Zhao, X., Schoenfeld, O., Aoyagi, Y. and Sugano, T., Appl. Phys. Lett., 65, 1994, 1290.
4. Lin, J., Yao, G.Q., Duan, J.Q. and Qin, G.G., Solid State Commun., 97, 1996, 221.
5. Qin, G.G., Lin, J., Duan, J.Q. and Yao, G.Q., Appl. Phys. Lett., 69, 1996, 1689.
6. Kontkiewicz, A.J., Kontkiewicz, A.M., Siejka, J., Sen, S., Nowak, G., Hoff, A.M., Sakthivel, P., Ahmed, K., Mukherjee, P., Witanachchi, S. and Lagowski, J., Appl. Phys. Lett., 65, 1994, 1436.
7. Hirschman, K.D., Tsybeskov, I., Duttagupta, S.P. and Fauchet, P.M., Nature, 384, 1996, 338.
8. Li, G., Hou, X., Yuan, S., Chen, H., Zhang, F., Fan, H. and Wang, X., J. Appl. Phys., 80, 1996, 5967.
9. Hou, X.Y., Shi, G., Wang, W., Zhang, F.L., Hao, P.H., Huang, D.M. and Wang, X., Appl. Phys. Lett., 62, 1993, 1097.
10. Li, G., Liao, L., Liu, X., Hou, X. and Wang, X., Appl. Phys. Lett., 70, 1997, 1284.
11. Bechstedt, F. and Kackell, P., Phys. Rev. Lett., 75, 1995, 2180.
12. Shor, J.S., Grimberg, I., Weiss, B.-Z. and Kurtz, A.S., Appl. Phys. Lett., 62, 1993, 2836.
13. Mimura, H., Matsumot, T. and Kanemitsu, Y., Appl. Phys. Lett., 65, 1994, 3350.
14. Shor, J.S., Bemis, I., Kurtz, A.D., Grmberg, I., Weiss, B.Z., Macmillian, A.F. and Choyke, W.J., J. Appl. Phys., 76, 1994, 4045.
15. Liao, L., Bao, X., Wang, S. and Min, N., Chinese J. Semiconductor, 17, 1996, 76.
16. Wu, Y., Yan, F., Bao, X., Li, N., Liao, L., Zhang, M., Jiang, S. and Feng, D., Appl. Phys. Lett., 68, 1996, 2091.
17. Yang, B., Zhou, Y., Cai, W., He, P., Ruan, Y., Huang, Y., Liu, X. and Zhou, G., Appl. Phys. Lett., 64, 1994, 1445.
18. Yang, B., Cai, W., He, P., Sheng, Y., Jin, B., Ruan, Y., Hu, K., Huang, Y. and Zhou, G., J. Appl. Phys., 77, 1995, 6733.
19. Liao, L., Bao, X., Zheng, X., Li, N. and Min, N., Appl. Phys. Lett., 68, 1996, 850.
20. Seol, K.S., Leki, A., Ohki, Y., Nishikawa, H. and Tachimon, M., J. Appl. Phys., 80, 1996, 5967.
21. Luo, J. and Lin, W., Appl. Phys. Lett., 69, 1996, 916.