Si-C linked organic monolayers on crystalline silicon surfaces as alternative gate insulators

ChemPhysChem

Volumn 6, Issue 10, 2005, Pages 2153-2166

  Faber, Erik J ^a   De Smet, Louis C P M ^b   Olthuis, Wouter ^a   Zuilhof, Han ^b   Sudhölter, Ernst J R ^b   Bergveld, Piet ^a   Van Den Berg, Albert ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b WAGENINGEN UNIVERSITY   (Netherlands)

Author keywords

Insulators; Mercury probes; Monolayers; Semiconductors; Silicon

Indexed keywords

CAPACITANCE; ELECTRIC INSULATORS; METAL INSULATOR BOUNDARIES; MIS DEVICES; MONOLAYERS; PROBES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SILICON; SILICON COMPOUNDS;

CAPACITANCE VOLTAGE MEASUREMENTS; CRYSTALLINE SILICON SURFACES; DIODE IDEALITY FACTORS; EFFECTIVE BARRIER HEIGHTS; FIXED CHARGE DENSITY; MERCURY PROBE; METAL-INSULATOR-SEMICONDUCTORS; SILICON SURFACE MODIFICATIONS;

SEMICONDUCTING SILICON;

EID: 27144498545     PISSN: 14394235     EISSN: None     Source Type: Journal    
DOI: 10.1002/cphc.200500120     Document Type: Article

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