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33645912835
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Issued as NRCC publication No. 43861
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Issued as NRCC publication No. 43861.
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33645923337
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The AFM images show the same features as those reported for Si-CioH+i in ref 12, i.e., atomically flat terraces, which are free of etch pits and very stable in air
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The AFM images show the same features as those reported for Si-CioH+i in ref 12, i.e., atomically flat terraces, which are free of etch pits and very stable in air.
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17
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33645957017
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The differential capacitance measurements were analyzed only in the frequency range (typically 50 kHz to 500 Hz) in which the phase angle of the complex impedance was greater than 80°, i.e., the range for which the system behaved primarily as a combination of capacitive circuit elements.
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The differential capacitance measurements were analyzed only in the frequency range (typically 50 kHz to 500 Hz) in which the phase angle of the complex impedance was greater than 80°, i.e., the range for which the system behaved primarily as a combination of capacitive circuit elements.
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33645949328
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note
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As shown in Figures 1 and 2, the plateau after the flat-band potential was distorted by the hydrogen evolution, especially in the cases of Si(l 11)H and Si(l 1 DCaHs. The total capacitance was estimated from the turning point between the initial rising of capacitance and the pseudoplateau before the clear hydrogen evolution. All the data were averaged over more than three separate electrodes.
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