Distance dependence of the electron-transfer rate across covalently bonded monolayers on silicon

Journal of Physical Chemistry B

Volumn 105, Issue 44, 2001, Pages 10900-10904

  Cheng, Jun ^a,b   Robinson, David B ^a   Cicero, Ronald L ^a   Eberspacher, Todd ^a   Barrelet, Carl J ^a   Chidsey, Christopher E D ^a  

^a STANFORD UNIVERSITY   (United States)

^b DIONEX CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COVALENT BONDS;

ACTIVATION ENERGY; CAPACITANCE; CHEMICAL BONDS; ELECTRODES; ELECTRON TRANSPORT PROPERTIES; ELLIPSOMETRY; INFRARED SPECTROSCOPY; SILICON; ULTRAHIGH VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

MONOLAYERS;

EID: 0035829903     PISSN: 10895647     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp0123740     Document Type: Article

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