Molecular passivation of mercury-silicon (p-type) diode junctions: Alkylsilation, oxidation, and alkylsilation

Journal of Physical Chemistry B

Volumn 107, Issue 31, 2003, Pages 7803-7811

  Liu, Yong Jun ^a   Yu, Hua Zhong ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ALKYLATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRANSPORT PROPERTIES; MERCURY (METAL); OXIDATION; PASSIVATION; SEMICONDUCTOR DIODES; SILICON;

DIODE JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 0042734440     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp034791d     Document Type: Article

References (77)

1. (a) Rhoderich, E. H.; Williams, R. H. Metal-Semiconductor Contacts, 2nd ed.; Clarendon Press: Oxford, 1988.
2. (b) Sze, S. M. Physics of Semiconductor Devices, 2nd ed.; John Wiley & Sons: New York, 1981.
3. (c) Singh, J. Semiconductor Devices, Basic Principles; John Wiley & Sons: New York, 2001.
4. For examples of recent reviews, see: (a) Ashkenasy, G.; Cahen, D.; Cohen, R.; Shanzer, A.; Vilan, A. Acc. Chem. Res. 2002, 35, 121.
5. (b) Carroll, R. L.; Gorman, C. B. Angew. Chem., Int. Ed. 2002, 41, 4378.
6. (c) Cahen, D.; Kahn, A. Adv. Mater. 2003, 15, 271.
7. (a) Card, H. C.; Rhoderich, E. H. J. Phys. D: Appl. Phys. 1971, 4, 1589.
8. (b) Walker, L. G. Solid-State Electron. 1974, 17, 763.
9. (c) Chattopadhyay, P.; Daw, A. N. Solid-Slate Electron. 1986, 29, 555.
10. (d) Türüt, A.; Yalçin, N.; Saglam, M. Solid-State Electron. 1992, 35, 835.
11. (e) Wang, Q.; Liu, D.; Virgo, J. T.; Yeh, J.; Hillard, R. J. J. Vac. Sci. Technol. A 2000, 18, 1308.
12. (f) Temircl, C.; Bati, B.; Saglam, M.; Türüt, A. Appl. Surf. Sci. 2001, 772, 1.
13. (g) Selzer, Y.; Cahen, D. Adv. Mater. 2001, 13, 508.
14. (g) Asuha, Kobayashi, T.; Maida, O.; Inoue, M.; Takahashi, M.; Todokoro, Y.; Kobayashi, H. Appl. Phys. Lett. 2002, 81, 3410.
15. (a) Wittmer, M.; Freeouf, J. L. Phys. Lett. A 1993, 173, 190.
16. (b) Wittmer, M.; Freeouf, J. L. Phys. Rev. Lett. 1992, 69, 2701.
17. (c) Kampen, T. U.; Monch, W. Surf. Sci. 1995, 331, 490.
18. (d) Grupp, C.; Taleb-Ibrahimi, A. Surf. Sci. 1999, 433, 585.
19. (a) Kaneko, F.; Shibata, M.; Inaba, Y.; Kobayashi, S. Thin Solid Films 1989, 179, 121.
20. (b) Cakar, M.; Temirci, C.; Türüt, A. ChemPhysChem. 2002, 3, 701.
21. (c) Cakar, M.; Onganer, Y.; Türüt, A. Synth. Met. 2002, 126, 213.
22. (a) Fontaine, P.; Goguenheim, D.; Deresmes, D.; Vuillaume, D. Appl. Phys. Lett. 1993, 62, 2256.
23. (b) Boulas, C.; Davidovits, J. V.; Rondelez, F.; Vuillaume, D. Phys. Rev. Lett. 1996, 76, 4797.
24. (c) Vuillaume, D.; Boulas, C.; Collet, J.; Davidovits, J. V.; Rondelez, F. Appl. Phys. Lett. 1996, 69, 1646.
25. (d) Collet, J.; Lenfant, S.; Vuillaume, D.; Bouloussa, O.; Rondelez, F.; Gay, J. M.; Kham, K.; Chevrot, C. Appl. Phys. Lett. 2000, 76, 1339.
26. Krishnamoorthy, A.: Chanda, K.; Murarka, S. P.; Ramanath, G.; Ryan, J. G. Appl. Phys. Lett. 2001, 78, 2467.
27. (a) Cohen, R.; Zenou, N.; Cahen, D.; Yitzchaik, S. Chem. Phys. Lett. 1997, 279, 270.
28. (b) Chai, L.; Cahen, D. Mater. Sci. Eng. C 2002. 19, 339.
29. (c) Selzer, Y.; Salomon, A.; Cahen, D. J. Am. Chem. Soc. 2002, 124, 2886.
30. (d) Selzer, Y.; Salomon, A.; Cahen, D. J. Phys. Chem. B 2002, 106, 10432.
31. Li, D. Q.; Bishop, A.; Gim, Y.; Shi, X. B.; Fitzsimmons, M. R.; Jia, Q. X. Appl. Phys. Lett. 1998, 73, 2645.
32. (a) Kim, N. Y.; Laibinis, P. E. J. Am. Chem. Soc. 1999, 121, 7162.
33. (b) Vermeir, I. E.; Kim, N. Y.; Laibinis, P. E. Appl. Phys. Lett. 1999, 74, 3860.
34. (c) Kar, S.; Miramond, C.; Vuillaume, D. Appl. Phys. Lett. 2001, 78, 1288.
35. (d) Liu, Y. J.; Yu, H. Z. ChemPhysChem 2002, 3, 799.
36. (e) Liu, Y. J.; Yu, H. Z. ChemPhysChem 2003, 4, 335.
37. (a) Licciardello, A.; Puglisi, O.; Pignataro, S. Appl. Phys. Lett. 1986, 48, 41.
38. (b) Miura, T.; Niwano, M.; Shoji, D.; Miyamoto, N. J. Appl. Phys. 1996, 79, 4373.
39. (c) Ye, S.; Ichihara, T.; Uosaki, K. Appl. Phys. Lett. 1999, 75, 1562.
40. (d) Liu, Y. J.; Waugh, D. M.; Yu, H. Z. Appl. Phys. Lett. 2002, 81, 4967.
41. Dabrowski, J.; Mussig, H.-J. Silicon Surfaces and Formation of Interfaces: Basic Science and the Industrial World; World Scientific Publishing Co.: Singapore, 2000.
42. (a) International Technology Roadmap for Semiconductors, Homepage, 2003, http://public.itrs.net.
43. (b) Muller, D. A.; Sorsch, T.; Moccio, S.; Baumann, F. H.; Evans-Lutterodt, K.; Timp, G. Nature 1999, 399, 758.
44. Ulman, A. An Introduction to Ultrathin Organic Films: From Langmuir-Blodgttt to Self-Assembly: Academic Press: New York, 1991.
45. Ulman, A. Chem. Rev. 1996, 96, 1533.
46. For recent reviews, see: (a) Sieval, A. B.; Linke, R.; Zuihof, H.; Sudhölter, E. J. R. Adv. Mater. 2000, 12, 1457.
47. (b) Wayner, D. D. M.; Wolkow, R. A. J. Chem. Soc., Perkin Trans. 2 2002, 23.
48. (c) Buriak, J. M. Chem. Rev. 2002, 102, 1271.
49. (a) Linford, M. R.; Fenter, P.; Eisenberger, P. M.; Chidsey, C. E. D. J. Am. Chem. Soc. 1995, 117, 3145.
50. (b) Bansal, A.: Li, X.; Lauermann, I.; Lewis, N. S.; Yi, S. I.; Weinberg, W. H. J. Am. Chem. Soc. 1996, 118, 7225.
51. (c) Villeneuve, C. H.; Pinson, J.; Bernard, M. C.; Allongue, P. J. Phys. Chem. B 1997, 101, 2415.
52. (d) Sieval, A. B.; Vleeming, V.; Zuilhof, H.; Sudhölter, E. J. R. Langmuir 1999, 15, 8288.
53. (e) Boukherroub, R.; Morin, S.; Bensebaa, F.; Wayner, D. D. M. Langmuir 1999, 15, 3831.
54. For examples, see: (a) Slowinski, K.; Fong, H. K. Y.; Majda, M. J. Am. Chem. Soc. 1999, 121, 7257.
55. (b) Holmin, R. E.; Haag, R.; Ismagilov, R. F.; Mujica, V.; Ratner, M. A. ; Rampi, M. A.; Whitesides, G. M. Angew, Chem., Int. Ed. 2001, 40, 2316.
56. (c) Fan, F.-R. F.; Yang, J.; Dirk, S.; Price, D. W.; Kosynkin, D.; Tour, J. M.; Bard, A. J. J. Am. Chem. Soc. 2001, 123, 2454.
57. (d) Wold, D. J.; Frisbie, C. D. J. Am. Chem. Soc. 2001, 123, 5549.
58. (e) Leatherman. G.; Durantini, E. N.; Gust, D.; Moore, T. A.; Stone, S.; Zhou, Z.; Rez, P.; Liu, Y. Z.; Lindsay, S. M. J. Phys. Chem. 1999, 103, 4006.
59. (a) Mann, B.: Kuhn, H. J. Appl. Phys. 1971, 42, 4398.
60. (b) Honig, E. P. Thin Solid Films 1976, 33, 231.
61. (a) Yu, H. Z.; Morin, S.; Wayner, D. D. M.; Allongue, P.; Henry de Villeneuve, C. J. Phys. Chem. B 2000, 104, 11157.
62. (b) Yu, H. Z.; Boukherroub, R.; Morin, S.; Wayner, D. D. M. Electrochem. Commun. 2000, 2, 562.
63. (a) Brzoska, J. B.; Ben Azouz, I.; Rondelez, F. Langmuir 1994, 10. 4367.
64. (b) Parikh, A. N.; Allara, D. L.; Parikh, A. N.; Rondelez, F. J. Phys. Chem. 1994, 98, 7577.
65. The contact angles provided here are thermodynamic equilibrated contact angles of sessile liquid drops, which are believed to be smaller than advancing contact angles. They were determined on an AST Optima contact angle system at ambient conditions ( 18 - 22 °C. 30 - 35% relative humidity).
66. Ellipsometric measurements were performed with a Gaertner variable angle ellipsometer L116B using a helium - neon laser at an incident angle of 70°. The monolayer thickness was calculated using an index of refraction of 1.46 for both the hydrocarbon monolayers and silicon oxide.
67. 3) were mounted in a purged sample chamber with the light focused normal to one of the 45° bevels. Background spectra were obtained using a freshly prepared oxidized silicon surface.
68. Wasserman, S. R.; Whitcsides, G. M.; Tidswell, I. M.; Ocko, B. M.; Pershan, P. S.; Axe, J. D. J. Am. Chem. Soc. 1989, 111, 5852.
69. (a) Cheung, S. K.; Cheung, N. W. Appl. Phys. Lett. 1986, 49, 85.
70. (b) Werner, J. H. Appl. Phys. A 1988, 47, 291.
71. (c) Ayvildiz. E.; Tür̈t. A.; Efeoglu. H.; Tüzemen, S.; Saglam. M.; Yogurtçu. Y. K. Solid-State Electron. 1996. 39. 83.
72. Sharma, B. L. Metal-Semiconductor-Schottky Barrier Junctions and Their Applications; Plenum Press: New York, 1984.
73. (a) Chattopadhyay, P.; RayChaudhuri, B. Solid-State Electron. 1993, 36, 605.
74. (b) Chattopadhyay, P. Solid-Suite Electron. 1996, 39, 1491.
75. (c) Pandey, S.; Kal, S. Solid-State Electron. 1998, 42, 943.
76. m is 4.49 eV (see. Michaelson, H. B. J. Appl. Phys. 1977. 48, 4729)
77. m0 is the effective barrier tunneling mass of holes. X is the effective barrier height presented by the thin interfacial layer, and δ is the thickness of the interfacial layer.