Fundamental limit of gate oxide thickness scaling in advanced MOSFETs

Semiconductor Science and Technology

Volumn 15, Issue 5, 2000, Pages 485-490

  Hirose, M ^a   Koh, M ^a   Mizubayashi, W ^a   Murakami, H ^a   Shibahara, K ^a   Miyazaki, S ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); LEAKAGE CURRENTS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE; ULTRATHIN FILMS;

GATE OXIDES;

MOSFET DEVICES;

EID: 0033743212     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/5/308     Document Type: Article

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