Properties of electronic traps at silicon/1-octadecene interfaces

Applied Physics Letters

Volumn 78, Issue 9, 2001, Pages 1288-1290

  Samares, Kar ^a   Miramond, Corinne ^b,c   Vuillaume, Dominique ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

^b INSTITUT D ELECTRONIQUE   (France)

^c STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0348238141     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1351530     Document Type: Article

References (12)

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