Fabrication of 12 nm electrically variable shallow junction metal-oxide-semiconductor field effect transistors on silicon on insulator substrates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 6, 2003, Pages 2975-2979

  Henschel, W ^a   Wahlbrink, T ^a   Georgiev, Y M ^a   Lemme, M ^a   Mollenhauer, T ^a   Vratzov, B ^a   Fuchs, A ^a   Kurz, H ^a  

^a AMO GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; ELECTRON BEAMS; ETCHING; LITHOGRAPHY; MASKS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY; TRANSMISSION ELECTRON MICROSCOPY;

CHANNEL EFFECTS; TOPOGRAPHY;

MOSFET DEVICES;

EID: 0942300025     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1621670     Document Type: Conference Paper

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