Characterization and simulation of surface and line-edge roughness in photoresists

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 6, 2001, Pages 2694-2698

  Constantoudis, V ^a,b   Gogolides, E ^a   Patsis, G P ^a   Tserepi, A ^a   Valamontes, E S ^c  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

^c UNIVERSITY OF WEST ATTICA   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

FRACTAL DIMENSION; LINE-EDGE ROUGHNESS; MOLECULAR TYPE SIMULATOR; NEGATIVE TONE EPOXY RESISTS; PHOTOACID GENERATOR CONCENTRATION; ROOT MEAN SQUARE DEVIATION;

ALGORITHMS; COMPUTER SIMULATION; FOURIER TRANSFORMS; FRACTALS; LITHOGRAPHY; SCANNING ELECTRON MICROSCOPY; SURFACE ROUGHNESS; ULTRAVIOLET RADIATION;

PHOTORESISTS;

EID: 0035519112     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1420582     Document Type: Article

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