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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 11, 1999, Pages 6247-6252

Effectively Blocking Copper Diffusion at Low-fc Hydrogen Silsesquioxane/Copper Interface

(8) Llu, Po Tsun a Chang, Ting Chang b Yang, Ya Liang c Cheng, Yi Fang a Shih, Fu Yung d Lee, Jae Kyun a Tsai, Eric a Sze, Simon M b

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

c National Nanodevice Laboratory (Taiwan)

d Dow Corning Taiwan Inc (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; COPPER; DEGRADATION; DIELECTRIC PROPERTIES OF SOLIDS; DIFFUSION IN SOLIDS; HYDROGEN; INTERFACES (MATERIALS); PLASMA APPLICATIONS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; THERMAL STRESS;

HYDROGEN PLASMA TREATMENT; HYDROGEN SILSESQUIOXANE;

DIELECTRIC FILMS;

EID: 0033323945 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.6247 Document Type: Article

Times cited : (22)

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