Hydrogen silsesquioxane/novolak bilayer resist for high aspect ratio nanoscale electron-beam lithography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 6, 2000, Pages 3419-3423

  Van Delft, Falco C M J M ^a   Weterings, Jos P ^a   Van Langen Suurling, Anja K ^b   Romijn, Hans ^b  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CMOS INTEGRATED CIRCUITS; ELECTRON BEAM LITHOGRAPHY; HYDROGEN; MASKS; SILICON WAFERS;

BILAYER RESIST SYSTEM; HYDROGEN SILSESQUIOXANE (HSQ);

PHOTORESISTS;

EID: 0034318652     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1319682     Document Type: Article

References (7)

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