Properties of a-SiOx:H thin films deposited from hydrogen silsesquioxane resins

Journal of the Electrochemical Society

Volumn 145, Issue 8, 1998, Pages 2861-2866

  Loboda, M J ^a,b   Grove, C M ^a   Schneider, R F ^a  

^a DOW CORNING CORPORATION   (United States)

^b ELECTROCHEMICAL SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; DEPOSITION; ELECTRIC INSULATING MATERIALS; FILM PREPARATION; OLIGOMERS; PERMITTIVITY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SURFACE STRUCTURE; THIN FILMS; ULSI CIRCUITS;

HYDROGEN SILSESQUIOXANE RESINS; SILICON OXIDE;

DIELECTRIC FILMS;

EID: 0032135966     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838726     Document Type: Article

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