Depth dependence of resist line-edge roughness: Relation to photoacid diffusion length

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 6, 2002, Pages 2927-2931

  Shin, J ^a   Ma, Y ^a   Cerrina, F ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACIDS; ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; ELECTRON BEAM LITHOGRAPHY; IMAGE ANALYSIS; PHOTORESISTS; RANDOM PROCESSES; SCANNING ELECTRON MICROSCOPY; SURFACE ROUGHNESS;

AERIAL IMAGE MODULATION; DEPTH DEPENDENCE; PHOTOACID; RESIST LINE EDGE ROUGHNESS; STCHASTIC MODELING;

DIFFUSION;

EID: 0036883189     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1526638     Document Type: Article

References (8)

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