Fabrication of Si single-electron transistors with precise dimensions by electron-beam nanolithography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 1 SPEC., 2003, Pages 1-5

  Namatsu, H ^a   Watanabe, Y ^a   Yamazaki, K ^a   Yamaguchi, T ^a   Nagase, M ^a   Ono, Y ^a   Fujiwara, A ^a   Horiguchi, S ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB BLOCKADE; ELECTRON BEAM LITHOGRAPHY; ETCHING; NANOTECHNOLOGY; OXIDATION; SCANNING ELECTRON MICROSCOPY; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS;

HYDROGEN SILSESQUIOXANE; NANOWIRES; SINGLE ELECTRON TRANSISTORS;

TRANSISTORS;

EID: 0037207675     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1528919     Document Type: Article

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