Observation of inductively coupled-plasma-induced damage on n-type GaN using deep-level transient spectroscopy

Applied Physics Letters

Volumn 82, Issue 8, 2003, Pages 1233-1235

  Choi, Kyoung Jin ^a   Jang, Ho Wan ^a   Lee, Jong Lam ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); DRY ETCHING; ELECTRON TRAPS; GALLIUM NITRIDE; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SPECTROSCOPIC ANALYSIS;

DEEP-LEVEL TRANSIENT SPECTROSCOPY;

INDUCTIVELY COUPLED PLASMA;

EID: 0037463335     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1557316     Document Type: Article

References (13)

1. I. Adesida, C. Youtsey, A. T. Ping, F. Khan, L. T. Romano, and G. Bulmann, MRS Internet J. Nitride Semicond. Res. 4S1, G1.4 (1999).
2. C.-H. Chen, S. Keller, E. D. Haberer, L. Zhang, S. P. Denbaars, E. L. Hy, and Y. Wu, J. Vac. Sci. Technol. B 17, 2755 (1999).
3. C. R. Eddy, Jr. and B. Molnar, J. Electron. Mater. 28, 314 (1999).
4. X. A. Cao, H. Cho, S. J. Pearton, G. T. Dang, A. P. Zhang, F. Ren, R. J. Shul, L. Zhang, R. Hickman, and S. M. Van Hove, Appl. Phys. Lett. 75, 232 (1999).
5. K. J. Choi and J.-L. Lee, IEEE Trans. Electron Devices 48, 190 (2001).
6. K. J. Choi, J.-L. Lee, and H. M. Yoo, Appl. Phys. Lett. 75, 1580 (1999).
7. Z.-Q. Fang, J. W. Hemsky, D. C. Look, and M. P. Mack, Appl. Phys. Lett. 72, 448 (1998).
8. S. A. Goodman, F. D. Auret, M. J. Legodi, B. Beaumont, and P. Gibart, Appl. Phys. Lett. 78, 3815 (2001).
9. P. Hacke, T. Detchprohm, K. Hiramatsu, N. Sawaki, K. Tadatomo, and K. Miyake, J. Appl. Phys. 76, 304 (1994).
10. P. A. Martin, B. G. Streetman, and K. Hess, J. Appl. Phys. 52, 7409 (1981).
11. B. Massarani, F. G. Awad, M. Kaaka, and R. Darwich, Phys. Rev. B 58, 15614 (1998).
12. S. Hüfner, Photoelectron Spectroscopy (Spring, Berlin, 1995), p. 8.
13. E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts (Clarendon, Oxford, 1988), pp. 38-41.