12 W/mm Recessed-Gate AlGaN/GaN Heterojunction Field-Plate FET

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 563-566

  Ando, Y ^a   Okamoto, Y ^a   Hataya, K ^a   Nakayama, T ^a   Miyamoto, H ^a   Inoue, T ^a   Kuzuhara, M ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ANNEALING; BUFFER STORAGE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; THERMAL EFFECTS; TRANSCONDUCTANCE;

COLLAPSE-FREE DEVICES; GATE-DRAIN BREAKDOWN VOLTAGE (BVGD); LINEAR GAIN; POWER DENSITY;

HETEROJUNCTIONS;

EID: 0842309766     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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3. C. Nguyen, M. Micovic, D. Wong, A. Kurdoghlian, P. Hashimoto, P. Janke, L. McCray, J. Moon, "GaN HFET technology for RF applications," 2000 IEEE GaAs Digest, pp. 11 (Seattle, Nov. 5-8, 2000).
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6. Y. Ando, Y. Okamoto, H. Miyamoto, N. Hayama, T. Nakayama, K. Kasahara, M. Kuzuhara, "A 110-W AlGaN/GaN heterojunction FET on thinned sapphire substrate," 2001 IEDM Technical Digest, pp. 381 (Washington, D.C., Dec. 2-5, 2001).
7. T. Kikkawa, M. Nagahara, T. Kimura, S. Yokokawa, S. Kato, M. Yokoyama, Y. Tateno, K. Horino, K. Domen, Y. Yamaguchi, N. Kara, K. Joshin, "A 36 W CW AlGaN/GaN-power HEMT using surface-charge-controlled structure," 2003 IEEE RFIC Symp. Digest, pp. 167 (Philadelphia, June 8-10, 2003).
8. Y. Ando, Y. Okamoto, H. Miyamoto, T. Nakayama, M. Kuzuhara., "10W/ mm AlGaN-GaN HFET with a field modulating plate," IEEE Electron Device Lett. vol. 24, pp. 289, 2003.
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