Investigation of buffer traps in an AlGaN/GaN/Si high electron mobility transistor by backgating current deep level transient spectroscopy

Applied Physics Letters

Volumn 82, Issue 4, 2003, Pages 633-635

  Marso, M ^a   Wolter, M ^a   Javorka, P ^a   Kordos P ^a   Luth H ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHARGE CARRIERS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CURRENTS; ELECTRON TRAPS; GALLIUM NITRIDE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON;

CARRIER TRAPS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0037468069     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1540239     Document Type: Article

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