Submicron AlGaN/GaN HEMTs with very high drain current density grown by plasma-assisted MBE on 6H-SiC

IEEE Electron Device Letters

Volumn 23, Issue 12, 2002, Pages 691-693

  Weimann, Nils G ^a   Manfra, Michael J ^a   Chakraborty, Subhasish ^a,b   Tennant, Donald M ^a  

^a NOKIA RESEARCH CENTER   (United States)

^b MICHIGAN STATE UNIVERSITY   (United States)

Author keywords

Aluminum gallium nitride; Gallium nitride; Microwave power FETs; MODFETs; Molecular beam epitaxy (MBE)

Indexed keywords

CARRIER MOBILITY; CURRENT DENSITY; ELECTRON BEAM LITHOGRAPHY; GALLIUM NITRIDE; GATES (TRANSISTOR); HALL EFFECT; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; PLASMA APPLICATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; TRANSCONDUCTANCE;

ALUMINUM GALLIUM NITRIDE; DRAIN CURRENT DENSITY; PLASMA ASSISTED MOLECULAR BEAM EPITAXY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0037005191     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.806298     Document Type: Letter

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