Unpassivated AlGaN/GaN HEMTs with CW power density of 3.2W/mm at 25 GHz grown by plasma-assisted MBE

Electronics Letters

Volumn 39, Issue 8, 2003, Pages 694-695

  Manfra, M ^a   Weimann, N ^a   Baeyens, Y ^a   Roux, P ^a   Tennant, D M ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC CURRENTS; GALLIUM NITRIDE; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; SILICON CARBIDE;

PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0038342050     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030451     Document Type: Article

References (8)

1. MISHRA, U., PARIKH, P., and WU, Y.-F.: 'AlGaN/GaN HEMTs - an overview of device operation and applications', Proc. IEEE, 2002, 90, p. 1022
2. TILAK, V., GREEN, B., KAPER, V., KIM, H., PRUNTY, T., SMART, J., SHEALY, J., and EASTMAN, L.: 'Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs', IEEE Electron Device Lett., 2001, 22, p. 504
3. MICOVIC, M., KURDOGHLIN, A., HASHIMOTO, P., WONG, D., MOON, J., McCRAY, L., and NGUYEN, C.: 'AlGaN/GaN heterojunction field effect transistors grown by nitrogen plasma assisted molecular beam epitaxy', IEEE Tram. Electron Devices, 2001, 48, p. 591
4. WEIMANN, N., MANFRA, M., CHAKRABORTY, S., and TENNANT, D.: 'Unpassivated AlGaN-GaN HEMTs with minimal dispersion grown by plasma-assisted MBE on semi-insulating 6H-SiC substrates', IEEE Electron Device Lett., 2003 (accepted for publication)
5. LEE, C., WANG, H., YANG, J., WITKOWSKI, L., MUIR, M., KHAN, M.A., and SAUNIER, P.: 'State-of-art CW power density achieved at 26 GHz byAlGaN/GaN HEMTs', Electron. Lett., 2002, 38, p. 924
6. KASAHARA, K., MIYAMOTO, H., ANDO, Y., OKAMOTO, Y., NAKAYAMA, T., and KUZUHARA, M.: 'Ka-band 2.3 W power AlGaN/GaN hetcrojunction FET', IEDM Tech. Dig., 2002, p. 677
7. EASTMAN, L.F.: 'Experimental power-frequency limits of AlGaN/GaN HEMTs', IEEE MTT-S Int. Microw. Symp. Dig., 2002, p. 2273
8. OCOLA, L.E., TENNANT, D.M., and YE, P.D.: 'Bilayer process for T-gates and Γ-gates using 100 KV e-beam lithography', Microelectron. Eng., 2003 (accepted for publication)