Small signal measurement of Sc2O3 AlGaN/GaN moshemts

Solid-State Electronics

Volumn 48, Issue 2, 2004, Pages 355-358

  Luo, B ^a   Mehandru, R ^a   Kang, B S ^a   Kim, J ^a   Ren, F ^a   Gila, B P ^a   Onstine, A H ^a   Abernathy, C R ^a   Pearton, S J ^a   Gotthold, D ^b   Birkhahn, R ^b   Peres, B ^b   Fitch, R ^c   Gillespie, J K ^c   Jenkins, T ^c   Sewell, J ^c   Via, D ^c   Crespo, A ^c  

^a University of Florida   (United States)

^b EMCORE Corporation   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; SCANDIUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSCONDUCTANCE;

DRAIN RESISTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0242335131     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00322-8     Document Type: Article

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