Low-frequency noise in AlGaN/GaN MOSHFETs

Electronics Letters

Volumn 36, Issue 3, 2000, Pages 268-270

  Pala, N ^a   Gaska, R ^a   Rumyantsev, S ^a,c   Shur, M S ^a   Asif Khan, M ^b   Hu, X ^b   Simin, G ^b   Yang, J ^b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b UNIVERSITY OF SOUTH CAROLINA   (United States)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NATURAL FREQUENCIES; PARAMETER ESTIMATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; SPURIOUS SIGNAL NOISE; THRESHOLD VOLTAGE;

ALUMINUM GALLIUM NITRIDE; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; HOOGE PARAMETER; SPECTRAL NOISE DENSITY;

MOSFET DEVICES;

EID: 0034598723     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000171     Document Type: Article

References (10)

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