Ohmic contact characterization of AlGaN/GaN device layers with spatially localized LEEN spectroscopy

Solid-State Electronics

Volumn 46, Issue 9, 2002, Pages 1427-1431

  Jessen, G H ^a   White, B D ^a   Bradley, S T ^a   Smith, P E ^a   Brillson, L J ^a   Van Nostrand, J E ^b   Fitch, R ^b   Via, G D ^b   Gillespie, J K ^b   Dettmer, R W ^b   Sewell, J S ^b  

^a Ohio State University   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

AlGaN; Cathodoluminescence; GaN; HEMT; Low energy electron excited nano luminescence; Luminescence; Ohmic contacts

Indexed keywords

ANNEALING; CATHODOLUMINESCENCE; ELECTRIC RESISTANCE; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SPECTROSCOPIC ANALYSIS;

LOW ENERGY ELECTRON-EXCITED NANO-LUMINESCENCE (LEEN) SPECTROSCOPY;

OHMIC CONTACTS;

EID: 0036721757     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00075-8     Document Type: Article

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