Transient response of highly doped thin channel GaN metal-semiconductor and metal-oxide-semiconductor field effect transistors

Solid-State Electronics

Volumn 46, Issue 5, 2002, Pages 711-714

  Pala, N ^a   Rumyantsev, S L ^a   Shur, M S ^a   Hu, X ^b   Tarakji, A ^b   Gaska, R ^b   Asif Khan, M ^c   Simin, G ^c   Yang, J ^c  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

^c University of South Carolina   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; GALLIUM NITRIDE; GATES (TRANSISTOR); HETEROJUNCTIONS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (HFET);

MOSFET DEVICES;

EID: 0036568217     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00302-1     Document Type: Article

References (8)