Simulating quantum transport in nanoscale MOSFETs: Ballistic hole transport, subband engineering and boundary conditions

IEEE Transactions on Nanotechnology

Volumn 2, Issue 3, 2003, Pages 135-143

  Venugopal, Ramesh ^a,b   Ren, Zhibin ^c   Lundstrom, Mark S ^a  

^a PURDUE UNIVERSITY   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c IBM   (United States)

Author keywords

Ballistic transport; Boundary conditions; Subband engineering

Indexed keywords

BAND STRUCTURE; BOUNDARY CONDITIONS; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC POTENTIAL; ELECTROSTATICS; FERMI LEVEL; HAMILTONIANS; NANOTECHNOLOGY; QUANTUM THEORY; SILICON ON INSULATOR TECHNOLOGY;

BALLISTIC TRANSPORT; HOLE QUANTIZATION; QUANTUM TRANSPORT; SUBBAND ENGINEERING;

MOSFET DEVICES;

EID: 2942573178     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2003.817229     Document Type: Article

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