A computational study of thin-body, double-gate, schottky barrier MOSFETs

IEEE Transactions on Electron Devices

Volumn 49, Issue 11, 2002, Pages 1897-1902

  Guo, Jing ^a   Lundstrom, Mark S ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

MOSFETs; Nanotechnology; Quantum effects; Schottky barriers; Semiconductor device modeling; Transistors

Indexed keywords

COMPUTATIONAL METHODS; ELECTRON TUNNELING; NANOTECHNOLOGY; POISSON EQUATION; QUANTUM THEORY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE MODELS;

THERMIONIC BARRIERS;

MOSFET DEVICES;

EID: 0036867952     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.804696     Document Type: Article

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