Scanning Kelvin probe microscopy of surface electronic structure in GaN grown by hydride vapor phase epitaxy

Journal of Applied Physics

Volumn 91, Issue 12, 2002, Pages 9924-9929

  Simpkins, B S ^a   Schaadt, D M ^a   Yu, E T ^a   Molnar, R J ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR STATE; FINITE SIZE; HYDRIDE VAPOR PHASE EPITAXY; IMAGE SURFACE; POTENTIAL VARIATIONS; PROBE TIPS; SCANNING KELVIN PROBE MICROSCOPY; SCANNING KELVIN PROBES; SURFACE ELECTRONIC STRUCTURES; SURFACE WORK FUNCTIONS; THREADING DISLOCATION;

ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM COMPOUNDS; VAPORS;

SURFACE POTENTIAL;

EID: 0037097989     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1481208     Document Type: Article

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