Dislocation distribution and subgrain structure of GaN films deposited on sapphire by HVPE and MOVPE

Materials Research Society Symposium - Proceedings

Volumn 482, Issue , 1997, Pages 417-422

  Dunn, K A ^a   Babcock, S E ^a   Vaudo, R ^a   Phanse, V ^a   Redwing, J ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; DEPOSITION; DISLOCATIONS (CRYSTALS); METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; THICK FILMS; TRANSMISSION ELECTRON MICROSCOPY;

THREADING DISLOCATIONS;

SEMICONDUCTING FILMS;

EID: 0031379394     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-482-417     Document Type: Conference Paper

References (2)