Structure and characteristics of strained-Si-On-insulator (strained-SOI) MOSFETs

Materials Research Society Symposium - Proceedings

Volumn 686, Issue , 2002, Pages 9-20

  Takagi, Shin Ichi ^a   Tezuka, Tsutomu ^a   Sugiyama, Naoharu ^a   Mizuno, Tomohisa ^a   Kurobe, Atsushi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC INSULATORS; ELECTRIC POTENTIAL; HETEROJUNCTIONS; HOLE MOBILITY; OXIDATION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS;

STRAINED SILICON FILMS;

MOSFET DEVICES;

EID: 0036346786     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (39)