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IEEE Transactions on Electron Devices

Volumn 48, Issue 8, 2001, Pages 1612-1618

Advanced SOI p-MOSFETs with strained-Si channel on SiGe-on-insulator substrate fabricated by SIMOX technology

(4) Mizuno, Tomohisa a,b Sugiyama, Naoharu b Kurobe, Atsushi a,b Takagi, Shin Ichi a,b

a IEEE (Japan)

b TOSHIBA CORPORATION (Japan)

Author keywords

Buried oxide; Mobility; MOSFETs; SiGe; SIMOX; SOI; Strained Si

Indexed keywords

BURIED OXIDE LAYER; SEPARATION BY IMPLANTED OXYGEN TECHNOLOGY; SILICON GERMANIUM FILM;

EPITAXIAL GROWTH; HOLE MOBILITY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON ON INSULATOR TECHNOLOGY;

MOSFET DEVICES;

EID: 0035424372 PISSN: 00189383 EISSN: None Source Type: Journal
DOI: 10.1109/16.936571 Document Type: Article

Times cited : (55)

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