On the reduction of direct tunneling leakage through ultrathin gate oxides by a one-dimensional Schrödinger-Poisson solver

Journal of Applied Physics

Volumn 87, Issue 11, 2000, Pages 7931-7939

  Cassan, Eric ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000570079     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373477     Document Type: Article

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