Experimental evidence of valence band deformation due to strain in inverted hole channel of strained-Si pMOSFETs

Thin Solid Films

Volumn 369, Issue 1, 2000, Pages 338-341

  Tezuka, Tsutomu ^a   Kurobe, Atsushi ^a   Sugiyama, Naoharu ^a   Takagi, Shin ichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; BAND STRUCTURE; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; HALL EFFECT; MOSFET DEVICES; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; THIN FILMS;

HOLE CHANNELS; STRAINED SILICON LAYERS; VALENCE BOND DEFORMATION;

SEMICONDUCTING FILMS;

EID: 0034230255     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00876-2     Document Type: Article

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