Novel SOI p-channel MOSFETs with higher strain in Si channel using double SiGe heterostructures

IEEE Transactions on Electron Devices

Volumn 49, Issue 1, 2002, Pages 7-14

  Mizuno, Tomohisa ^a,b   Sugiyama, Naoharu ^b   Tezuka, Tsutomu ^b   Takagi, Shin Ichi ^a,b  

^a IEEE   (Japan)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

Buried oxide; Double SiGe structure; Mobility; MOSFETs; Raman spectroscopy; SIMOX; Strained Si

Indexed keywords

BURIED OXIDE; CARRIER VELOCITY; CRITICAL TEMPERATURE; ELASTIC ENERGY; ELASTIC ENERGY BALANCE; HOLE MOBILITY ENHANCEMENT; SIMOX TECHNOLOGY;

HETEROJUNCTIONS; HOLE MOBILITY; INTEGRATED CIRCUIT MANUFACTURE; ION IMPLANTATION; LATTICE CONSTANTS; OXIDES; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SILICON ON INSULATOR TECHNOLOGY; STRAIN;

MOSFET DEVICES;

EID: 0036253414     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.974741     Document Type: Article

References (15)

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