Formation of SiGe on insulator structure and approach to obtain highly strained Si layer for MOSFETs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 B, 2001, Pages 2875-2880

  Sugiyama, Naoharu ^a   Mizuno, Tomohisa ^a   Suzuki, Masamichi ^a   Takagi, Sin Ichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

SiGe; SIMOX; SOI; Strained silicon

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; DIFFUSION; MOSFET DEVICES; RELAXATION PROCESSES; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM COMPOUNDS; STRAIN;

SEPARATION BY IMPLANTED OXYGEN (SIMOX) TECHNOLOGY;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0035300773     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2875     Document Type: Article

References (11)