Advanced SOI MOSFET's with strained-Si/SiGe heterostructures

IEICE Transactions on Electronics

Volumn E84-C, Issue 10, 2001, Pages 1423-1430

  Mizuno, T ^a   Sugiyama, N ^a   Kurobe, A ^a   Takagi, S ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Mobility; SiGe; SIMOX; SOI; Strained Si

Indexed keywords

ELECTRIC PROPERTIES; ELECTRON MOBILITY; HETEROJUNCTIONS; HOLE MOBILITY; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; STATISTICAL METHODS; SUBSTRATES;

DRAIN CURRENT; SEPARATION BY IMPLANTED OXYGEN;

MOSFET DEVICES;

EID: 0035483089     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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