Formation of strained-silicon layer on thin relaxed-SiGe/SiO2/Si structure using SIMOX technology

Thin Solid Films

Volumn 369, Issue 1, 2000, Pages 199-202

  Sugiyama, N ^a   Mizuno, T ^a   Takagi, S ^a   Koike, M ^a   Kurobe, A ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; ION IMPLANTATION; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; STRESS RELAXATION; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

OXYGEN IMPLANTATION; STRAINED SILICON; ULTRA-HIGH VACUUM CHEMICAL VAPOR DEPOSITION (UHV-CVD);

SEMICONDUCTING FILMS;

EID: 0034224889     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00806-3     Document Type: Article

References (4)

1. Powell A.R., Iyer S.S., LeGoues F.K. Appl. Phys. Lett. 1994;64.
2. Fukatsu S., Ishikawa Y., Shibata N. Appl. Phys. Lett. 72:1998;3485.
3. Ohguro T., Yamada K., Sugiyama N., et al. IEEE Trans. Electron. Device. 45:1998;710.
4. Welser J.J. The Application of strained-Si/relaxed-SiGe hetero structures to MOSFET, PhD Thesis. 1994;Stanford University.