Impact of strained-Si channel on complementary metal oxide semiconductor circuit performance under the sub-100 nm regime

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 B, 2001, Pages 2627-2632

  Hatakeyama, T ^a   Matsuzawa, K ^a   Takagi, S I ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

CMOS; Energy relaxation time; Germanium; Hot carrier; Mobility; MOSFET; Silicon; Strain; Velocity overshoot; Velocity saturation

Indexed keywords

CARRIER MOBILITY; COMPUTER SIMULATION; HOT CARRIERS; IMPACT IONIZATION; MOSFET DEVICES; SCHEMATIC DIAGRAMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

ENERGY RELAXATION; VELOCITY OVERSHOOT EFFECTS;

CMOS INTEGRATED CIRCUITS;

EID: 0035300750     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2627     Document Type: Article

References (15)