The effect of In/N ratio on the optical quality and lasing threshold in GaxIn1-xAs1-yNy/GaAs laser structures

Superlattices and Microstructures

Volumn 29, Issue 2, 2001, Pages 169-186

  Potter, R ^a   Mazzucato, S ^a   Balkan, N ^a   Adams, M J ^a   Chalker, P R ^b   Joyce, T B ^b   Bullough, T J ^b  

^a UNIVERSITY OF ESSEX   (United Kingdom)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

1.3 m lasers; GaInAsN structures; Optical quality of GaInAsN GaAs

Indexed keywords

COMPOSITION EFFECTS; CURRENT DENSITY; FABRY-PEROT INTERFEROMETERS; INDIUM; NITROGEN; OPTICAL PROPERTIES; QUANTUM WELL LASERS; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

GALLIUM INDIUM ARSENIDE; LASING THRESHOLD; OPTICAL QUALITY; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0035246624     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.2000.0967     Document Type: Article

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